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| HiPerFASTTM IGBT IXGH30N60B IXGT30N60B VCES IC25 VCE(sat) tfi = 600 V = 60 A = 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 600 600 20 30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C TO-247 AD (IXGH) G C (TAB) C E TO-268 (D3) (IXGT) G E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. 6 g Features * International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD * High current handling capability * Latest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies Advantages * Space savings (two devices in one package) * High power density * Suitable for surface mounting * Switching speed for high frequency applications * Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) 97516D (7/00) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 0.072 2.5 -0.286 200 1 100 TJ = 150C 1.8 2.0 5 V %/K V %/K mA mA nA V V BVCES VGE(th) ICES IGES VCE(sat) VCE(sat) IC = 250 mA, VGE = 0 V BVCES temperature coefficient IC = 250 mA, VCE = VGE VGE(th) temperature coefficient VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC IC = IC110, VGE = 15 V = IC110, VGE = 15 V TJ = 25C TJ = 150C IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-2 IXGH30N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 2700 VCE = 25 V, VGE = 0 V, f = 1 MHz 190 50 125 IC = IC110, VGE = 15 V, VCE = 0.5 VCES 23 50 Inductive load, TJ = 25C IC = IC110, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 150C IC = IC110, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 30 130 100 1.3 25 35 0.3 200 290 3 220 190 2 150 35 75 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 K/W (IXGH30N60B) 0.25 K/W IXGT30N60B TO-247 AD (IXGH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC110; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 1.5 2.49 IXBH30N60B characteristic curves are located in the IXBH30N60BU1 data sheet. TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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